B.V. Pushnyi : rechercher sur Z-Library

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1

GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)

Khvostikov, V. P., Sorokina, S. V., Potapovich, N. S., Levin, R. V., Marichev, A. E., Timoshina, N. Kh., Pushnyi, B. V.

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 416 KB

english, 2018

2

Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE

S.S Kizhayev, N.V Zotova, S.S Molchanov, B.V Pushnyi, Yu.P Yakovlev

Journal:

Journal of Crystal Growth

Année:

2003

Langue:

english

Fichier:

PDF, 114 KB

english, 2003

3

Deep centers in AlGaN-based light emitting diode structures

A.Y Polyakov, N.B Smirnov, A.V Govorkov, M.G Mil'vidskii, A.S Usikov, B.V Pushnyi, W.V Lundin

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 161 KB

english, 1999

4

Effect of Si doping on structural, photoluminescence and electrical properties of GaN

N.M. Shmidt, A.V. Lebedev, W.V. Lundin, B.V. Pushnyi, V.V. Ratnikov, T.V. Shubina, A.A. Tsatsul’nikov, A.S. Usikov, G. Pozina, B. Monemar

Journal:

Materials Science and Engineering: B

Année:

1999

Langue:

english

Fichier:

PDF, 83 KB

english, 1999

5

Possible impact of surface morphology on stimulated emission in GaN–AlGaN double heterostructures

J Christen, T Hempel, F Bertram, N.N Ledentsov, D Bimberg, A.V Sakharov, M.V Maximov, A.S Vsikov, W.V Lundin, B.V Pushnyi, Zh.I Alferov

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

1998

Langue:

english

Fichier:

PDF, 490 KB

english, 1998

6

Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

M. V. Maksimov, A. V. Sakharov, V. V. Lundin, A. S. Usikov, B. V. Pushnyi, I. L. Krestnikov, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Alferov, V. P. Rozum

Journal:

Technical Physics Letters

Année:

1997

Langue:

english

Fichier:

PDF, 74 KB

english, 1997

7

Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

A. S. Usikov, V. V. Tret’yakov, V. V. Lundin, Yu. M. Zadiranov, B. V. Pushnyi, S. G. Konnikov

Journal:

Technical Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 425 KB

english, 1999

8

Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1−xN epilayers on sapphire

A. S. Usikov, V. V. Tret’yakov, A. V. Bobyl’, R. N. Kyutt, W. V. Lundin, B. V. Pushnyi, N. M. Shmidt

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 164 KB

english, 2000

9

Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. I. Voronina, T. S. Lagunova, B. V. Pushnyi, Yu. P. Yakovlev

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 68 KB

english, 2003

10

MOCVD growth and Mg-doping of InAs layers

T. I. Voronina, T. S. Lagunova, S. S. Kizhayev, S. S. Molchanov, B. V. Pushnyi, Yu. P. Yakovlev

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 87 KB

english, 2004

11

Properties of the GaSb epitaxial layers obtained by the MOCVD method

R. V. Levin, A. S. Vlasov, N. V. Zotova, B. A. Matveev, B. V. Pushnyĭ, V. M. Andreev

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 247 KB

english, 2006

12

Properties of narrow-bandgap (0.3–0.48 eV) A3B5solid solution epilayers grown by metal-organic chemical vapor deposition

V. I. Vasil’ev, G. S. Gagis, R. V. Levin, A. G. Deryagin, V. I. Kuchinskii, B. V. Pushnyi

Journal:

Technical Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 153 KB

english, 2012

13

AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 μm spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds

V. I. Vasil’ev, G. S. Gagis, R. V. Lyovin, B. V. Pushnyi, A. G. Deryagin, V. I. Kuchinskii, M. N. Mizerov

Journal:

Technical Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 142 KB

english, 2012

14

Preparation of a strip structure for quantum-cascade lasers

Mamutin, V. V., Il’inskaya, N. D., Pushnyi, B. V., Levin, R. N., Shernyakov, Yu. M.

Journal:

Technical Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 519 KB

english, 2013

15

Photoinduced formation of dimers at a liquid/(001)GaAs interface

Berkovits, V. L., Gusev, A. O., Lantratov, V. M., L'vova, T. V., Pushnyi, A. B., Ulin, V. P., Paget, D.

Journal:

Physical Review B

Année:

1996

Langue:

english

Fichier:

PDF, 69 KB

english, 1996

16

Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

Lundin, W.V., Usikov, A.S., Pushnyi, B.V., Ushakov, U.I., Stepanov, M.V., Shmidt, N.M., Shubina, T.V., Sakharov, A.V., Faleev, N.N., Solov'ev, V., Sitnikova, A.A., Kudriavtsev, Yu.A., Ber, B.Ya., Zadi

Journal:

Materials Science Forum

Année:

1998

Fichier:

PDF, 352 KB

1998

17

Some Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer Quality

Lundin, W.V., Usikov, A.S., Pushnyi, B.V., Ushakov, U.I., Stepanov, M.V., Shmidt, N.M., Sakharov, A.V., Zadiranov, Yu.M., Suturin, S.M., Busov, V.

Journal:

Materials Science Forum

Année:

1998

Fichier:

PDF, 306 KB

1998

18

Electrical and Optical Properties of Highly Strained GaN Epilayers

Usikov, A.S., Lundin, W.V., Pushnyi, B.V., Shmidt, N.M., Davydov, V.Yu., Sakharov, A.V., Shubina, T.V., Toropov, Andrey A., Faleev, N.N., Shcheglov, M.P., Tsatsul'nikov, A.F.

Journal:

Materials Science Forum

Année:

1998

Fichier:

PDF, 371 KB

1998

19

Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures

Levin, R. V., Marichev, A. E., Shvarts, M. Z., Marukhina, E. P., Khvostikov, V. P., Pushnyi, B. V., Mizerov, M. N., Andreev, V. M.

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 272 KB

english, 2015

20

Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3–5 µm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3–5 µm)

Gagis, G S, Vasil'ev, V I, Deryagin, A G, Dudelev, V V, Maslov, A S, Levin, R V, Pushnyi, B V, Smirnov, V M, Sokolovskii, G S, Zegrya, G G, Kuchinskii, V I

Journal:

Semiconductor Science and Technology

Année:

2008

Langue:

english

Fichier:

PDF, 687 KB

english, 2008

21

InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition

Levin, R. V., Nevedomskii, V. N., Pushnyi, B. V., Bert, N. A., Mizerov, M. N.

Journal:

Technical Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 343 KB

english, 2016

22

Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films

Polyakov, Alexander Y., Smirnov, Nikolai B., Govorkov, Anatoliy V., Usikov, Alexander S., Shmidt, Natalie M., Pushnyi, Boris V., Tsvetkov, Denis V., Stepanov, Sergey I., Dmitriev, Vladimir A., Mil'vid

Journal:

MRS Proceedings

Année:

1999

Langue:

english

Fichier:

PDF, 56 KB

english, 1999

23

Electrochemical Etching in the GaN-Based Technology

Sidorov, V. G., Drizhuk, A. G., Sidorov, D. V., Lundin, W. V., Pushnyi, B. V., Usikov, A. S.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 2.23 MB

english, 1998

24

Investigation of spinodal decomposition of InGaAsP solid solutions grown by the MOCVD technique

Marichev, A E, Pushnyi, B V, Levin, R V

Journal:

Journal of Physics Conference Series

Année:

2016

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2016

25

Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well

Danilov, L. V., Mikhailova, M. P., Levin, R. V., Konovalov, G. G., Ivanov, E. V., Andreev, I. A., Pushnyi, B. V., Zegrya, G. G.

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 292 KB

english, 2018

26

Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW

Mikhailova, M. P., Andreev, I. A., Konovalov, G. G., Danilov, L. V., Ivanov, E. V., Kunitsyna, E. V., Il’inskaya, N. D., Levin, R. V., Pushnyi, B. V., Yakovlev, Yu. P.

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 308 KB

english, 2018

27

Development of the technology of manufacturing connecting elements in cascade photodetectors

Marichev, A E, Levin, R V, Prasolov, N D, Kontrosh, E V, Pushnyi, B V

Journal:

Journal of Physics Conference Series

Année:

2018

Langue:

english

Fichier:

PDF, 656 KB

english, 2018

28

Macro- and microstrains in MOCVD-grown GaN

Usikov, A., Ratnikov, V.V., Kyutt, R., Lundin, W. V., Pushnyi, B., Shmidt, N. M., Scheglov, M.P.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Année:

1998

Langue:

english

Fichier:

PDF, 178 KB

english, 1998

29

IR diode structures based on II-Type InAs/GaSb superlattices grown by MOCVD

Fedorov, I V, Levin, R V, Nevedomsky, V N, Usikova, A A, Bazhenov, N L, Mynbaev, K D, Pushnyi, B V, Zegrya, G G

Journal:

Journal of Physics Conference Series

Année:

2019

Langue:

english

Fichier:

PDF, 1.14 MB

english, 2019

30

A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy

Vasil’ev, V. I., Gagis, G. S., Levin, R. V., Marichev, A. E., Pushnyi, B. V., Scheglov, M. P., Kuchinskii, V. I., Ber, B. Ya., Kazantsev, D. Yu., Gorokhov, A. N., Popova, T. B.

Journal:

Technical Physics Letters

Année:

2018

Langue:

english

Fichier:

PDF, 339 KB

english, 2018

31

Manufacture and Study of Switch p–n-Junctions for Cascade Photovoltaic Cells

Levin, R. V., Marichev, A. E., Kontrosh, E. V., Prasolov, N. D., Kalinovskii, V. S., Pushnyi, B. V.

Journal:

Technical Physics Letters

Année:

2018

Langue:

english

Fichier:

PDF, 401 KB

english, 2018

32

Study of Instrumental Heterostructures Based on Strained InAs/GaSb Superlattices Grown by MOCVD Method

Fedorov, I V, Levin, R V, Usikova, A A, Bazhenov, N L, Ratushnyi, V I, Pushnyi, B V, Zegrya, G G

Journal:

Journal of Physics Conference Series

Année:

2018

Fichier:

PDF, 596 KB

2018

33

Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

Buzynin, A. N., Osiko, V. V., Buzynin, Yu. N., Pushnyi, B.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Année:

1998

Langue:

english

Fichier:

PDF, 1.04 MB

english, 1998

34

Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

Buzynin, A. N., Osiko, V. V., Buzynin, Yu. N., Pushnyi, B.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Année:

1998

Fichier:

PDF, 1.04 MB

1998

35

Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD

Danilov, L. V., Levin, R. V., Nevedomskyi, V. N., Pushnyi, B. V.

Journal:

Année:

2019

Langue:

english

Fichier:

PDF, 818 KB

english, 2019

36

High-Resistivity Gallium Antimonide Produced by MetalâOrganic Vapor-Phase Epitaxy

Levin, R. V., Vlasov, A. S., Smirnov, A. N., Pushnyi, B. V.

Journal:

Année:

2019

Fichier:

PDF, 519 KB

2019

37

Subcontact layers of p-InGaAs with minimal resistance for photodetectors of high-power laser radiation

Epoletov, V S, Marichev, A E, Popova, T B, Pushnyi, B V, Levin, R V

Journal:

Journal of Physics Conference Series

Année:

2020

Fichier:

PDF, 985 KB

2020